Chemical vapor deposition of copper and copper oxide thin films from copper(I) tert-butoxide

Abstract

The low-temperature deposition of thin-film materials from molecular transition-metal precursors is an area of rapidly growing interest. We now describe the deposition of copper-containing films from copper(I) tert-butoxide tetramer, (Cu(O-t-Bu)){sub 4}, which was chosen because it is one of the more volatile molecular derivatives of copper known. These results are related to efforts directed toward the chemical vapor deposition of thin films of the new copper oxide based high-temperature superconductors.