Abstract
This chapter begins with the importance of contact resistance (Rc) in the state-of-the-art CMOS. The basics of Ohmic contacts, including the definition of Rc in a transistor, and the more intrinsic parameter characterizing the quality of metal/semiconductor contacts, that is, specific contact resistivity (ρc), will be discussed. The recently developed test vehicles or structures for extracting extremely low-specific contact resistivity will be reviewed. Then the discussions will be extended to how to control or manipulate the specific contact resistivity for the contacts between metals and different semiconductors, including Si/SiGe, Ge/III-V, and potential CMOS channel materials such as graphene, MoS2, carbon nanotube (CNT), etc. This chapter provides an overview of the technological developments of contact technology in advanced CMOS devices and attempts to project into the near future about the trend of contact technology in extremely scaled CMOS with nonplanar device architectures.
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