Abstract
Metal-oxide-semiconductor (MOS) Schottky diodes were stressed with a bias of 0 V during 60Co-γ source irradiation with the total dose range from 0 to 500 kGy at room temperature. Tin oxide films on Si exhibited a typical behavior of a MOS structure. The variations in the interface state density and series resistance of the Schottky diode have been studied before and after irradiation. The capacitance–voltage ( C–V) and conductance–voltage ( G/ ω– V) characteristics confirm that the interface state density ( D it) and series resistance ( R s) of the diode are important parameters that strongly influence the electrical parameters of MOS structures before and after irradiation. It has been found that D it values of MOS structure decreases, while the R s increases with increasing radiation dose. The single-frequency method of Hill–Coleman was used to determine the interface state density. The values, obtained before and after 60Co-γ source radiation for D it, are the order of 10 13 eV −1 cm −2.
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