Abstract
The effect of 60Co (γ-ray) irradiation on the electrical properties of Au/SnO 2/n-Si (MIS) structures has been investigated using the capacitance–voltage ( C– V) and conductance–voltage ( G/ ω− V) measurements in the frequency range 1 kHz to 1 MHz at room temperature. The MIS structures were exposed to γ-rays at a dose rate of 2.12 kGy/h in water and the range of total dose was 0–500 kGy. It was found that the C– V and G/ ω− V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increasing dose. Also, the radiation-induced threshold voltage shift (Δ V T) strongly depended on radiation dose and frequency, and the density of interface states N ss by Hill–Coleman method decreases with increasing radiation dose.
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