Abstract

High frequency characteristics of tin oxide (SnO 2) thin films were studied. SnO 2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance–voltage ( C– V) and conductance–voltage ( G/ ω– V) characteristics of the metal–oxide–semiconductor (Au/SnO 2/ n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D it, ranges from 2.44 × 10 13 cm −2 eV −1 at 300 kHz to 0.57 × 10 13 cm −2 eV −1 at 5 MHz and exponentially decreases with increasing frequency. The C– V and G/ ω– V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metal–oxide–semiconductor structure.

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