6 - Silicon Carbide Crystals — Part I: Growth and Characterization

Abstract

This chapter reviews the growth and characterization of Silicon Carbide (SiC) Crystals. Recent developments in SiC bulk growth and epitaxial film technology have greatly advanced the SiC-based device technology. The modified Lely method has become a standard process for industrial production of SiC boules. This has been made possible by optimizing the crystal growth technology in conjunction with modeling and computer simulation. The defects, particularly micropipes, have been significantly reduced by improving the growth technique, optimizing the process parameters, and developing better understanding of the defect generation and propagation. Defects present in the SiC crystals have been characterized using X-ray topography, and microscopy-based techniques such as chemical etching, AFM, SEM, TEM, reflection and transmission optical microscopy. Even though many of these techniques are used in a complementary manner to obtain detailed information on defects present in the crystal, X-ray topography, particularly SWBXT, is quite superior to other methods in revealing defects present in the SiC crystals.