Abstract
The highest cutoff frequency of double heterojunction bipolar transistors (HBTs) fabricated using 6.2 A materials has been demonstrated by researchers at the Naval Research Laboratory (NRL) in the US. The team fabricated InAlAsSb/InGaSb HBTs with high conductivity InAsSb layers, and achieved record operation up to 59 GHz, along with improved DC characteristics. The development of these devices is of particular interest for high-speed signal conversion or power limited millimetre-wave applications such as in space or telecommunications.
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