Abstract
HBTs offer advantages such as a high transconductance per unit area allowing high integration density of digital and analog functions; reduced low frequency noise making them attractive for low phase noise oscillators and DC coupling between stages without level shifting diodes. InGaAs/lnP double heterojunction bipolar transistors (HBTs)) offer the advantages over GaAs/AlGaAs HBTs of a lower turn-on voltage, higher electron mobility, better thermal dissipation and better microwave performance, while still obtaining a high breakdown voltage. Additionally, the layer structure of InAlAs/InGaAs/InP HBTs allows monolithic OEIC integration with long-wavelength photodiodes. In our presentation, we will demonstrate the capabilities of InP-based HBT's by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave technique.
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