Abstract
A novel device structure using GaInP in a thin layer at the base-collector (BC) junction of a GaAs heterojunction bipolar transistor (HBT) is described. The proposed device, the tunnel-collector HBT (TC-HBT) benefits from lower knee voltage and saturation charge storage than a single HBT, yet has higher f/sub T/ and higher current density than double HBTs. TC-HBTs have been fabricated with a 10 nm wide bandgap tunnel layer between the base and collector. These devices have a low offset and knee voltage of V/sub CE/, /sub sat/ = 30 mV and V/sub K/ /spl sim/ 0.3 V together with a high DC current gain of 170. For RF devices at a collector current density of J/sub C/ = 5/spl times/10/sup 4/ A/cm/sup 2/ the TC-HBT has an f/sub T/ of 54 GHz and f/sub max/ of 68 GHz. In comparison with conventional GaInP/GaAs HBTs, these devices have shown 5 /spl times/ reduction in saturation charge storage. These attributes make the proposed devices very well suited for microwave power amplifiers.
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