6–10 GHz ultra-wideband CMOS LNA

Abstract

A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 µm CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6–10 GHz frequency band with a power consumption of 14 mW.