High-Voltage-Gain CMOS LNA For 6–8.5-GHz UWB Receivers

Abstract

The design of a fully integrated CMOS low noise amplifiers (LNA) for ultra-wide-band (UWB) integrated receivers is presented. An original LC input matching cell architecture enables fractional bandwidths of about 25%, with practical values, that match the new ECC 6-8.5-GHz UWB frequency band. An associated design method which allows low noise figure and high voltage gain is also presented. Measurements results on an LNA prototype fabricated in a 0.13-mum standard CMOS process show average voltage gain and noise figure of 29.5 and 4.5 dB, respectively.