Abstract
This work presents a 5-GHz power amplifier (PA) based on a tsmc™ 0.35-μm SiGe heterojunction bipolar transistor (HBT) process. The PA adopts an on-chip linearizer as a feedforward element that cancels third-order distortion at the PA output. The PA achieves an output 1-dB compression point (OP 1dB ) of 27 dBm, a power gain of 21.9 dB, and a power added efficiency of 31 %. Compared to a PA without a linearizer, the proposed PA improves the third-order distortion by 12 dB. For an OFDM/64-QAM signal, the error vector magnitude is minimized to 1.5 % at an output power of 18 dBm. The fabricated chip size is 2.17 mm 2 and is suitable for use in a highly integrated PA.
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