Abstract
The chapter describes single charge tunneling behavior in graphene devices. Coulomb blockade phenomena observed in graphene constrictions, patterned single electron transistors, and graphene nanoribbons are compared with those observed in the conventional single electron transistors with metallic islands. This chapter also covers the phenomena when compressible quantum dots are formed in graphene in the quantum Hall regime such as mesoscopic conductance fluctuations due to single charge tunneling into/out of the quantum dots.
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