Abstract
The single-charge tunneling behavior in graphene devices is reviewed and the Coulomb blockade phenomena observed in graphene constrictions, patterned single-electron transistors and graphene nanoribbons are compared with those observed in the conventional single-electron transistors with metallic islands. The phenomena that occur when compressible quantum dots are formed in graphene in the quantum Hall regime, including mesoscopic conductance fluctuations resulting from single-charge tunneling into/out of the quantum dots, are discussed.
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