5 - Reliability and Qualification Tests for High-Power MOSFET Transistors

Abstract

Silicon (Si) and silicon carbide (SiC) MOSFET transistors have multiple weak points, resulting in multiple failure modes and mechanisms. To study the reliability of these transistors using the non-destructive technique described in Chapter 8, the application of an accelerated aging process to these components is essential. This chapter begins by describing the various failure mechanisms of Si and SiC MOSFETs. To allow the most suitable aging test in terms of simplicity and speed to be chosen, this chapter then focuses on the reliability and qualification tests applied by manufacturers. Finally, we present the results of accelerated qualification tests applied to Si and SiC MOSFET transistors. These components are analyzed using the technique of photoemission microscopy.