5 - Planar fully depleted (FD) silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology

Abstract

This chapter reviews the key features of complementary metal oxide semiconductor field effect transistor (CMOSFET) devices using planar fully depleted silicon-on-insulator (FDSOI) technology. First, it presents the FDSOI technology and then focuses on the impact of key integration steps on device performance and variability: channel thickness and doping, buried oxide (BOX) thickness, ground (or back-) planes, gate stack and mechanical booster (SiGe channel and source/drain, sSOI).