Abstract
A novel 4H–SiC trench MOSFET with Inverted-T groove (IT-UMOS) is proposed and investigated by numerical TCAD simulations in this paper. The IT-UMOS features an Inverted-T groove beneath the gate trench. As a result, compared with the conventional trench MOSFET (C-UMOS) and step-UMOS, the IT-UMOS boasts a much lower gate-drain charge owing to the introduction of Inverted-T groove, thus a lowest switching loss is attained. In addition, the maximum oxide electric field during the blocking state in IT-UMOS is significantly reduced, which means the breakdown capability is not compromised. The dynamic figure of merit (FOM) Ron,sp × Qgd of IT-UMOS is the lowest among these three structures.
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