Abstract
In this study, a novel 4H-SiC Trench MOSFET with integrated heterojunction diode at the bottom of gate trench is proposed (HJD-TMOS) and investigated by TCAD simulation. The integrated heterojunction diode operates as a freewheeling diode in reverse conduction, which significantly reduces reverse recovery charge (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rr</inf> ) and reverse turn-on knee voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> ) more than 2 times, compared with conventional SiC trench MOSFET (C-TMOS) while maintaining almost the same threshold voltage and breakdown voltage. Moreover, due to the shielding effect of polysilicon below the gate, the gate to drain charge (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</inf> ) decreases by 68%, in comparison with C-TMOS. Therefore, the HJD-TMOS is a potential choice for high frequency, high efficiency applications.
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