Abstract

A 40 Gbit/s driver module incorporating a set of two original double-distributed amplifiers, based on 0.15 µm GaAs P-HEMT (high electron mobility transistor) technology, has been designed and realised. This module provides a state-of-the-art output driving voltage of near 3 Vpp, into a 50 Ω load, and an 18 dB gain over a DC to 41.5 GHz bandwidth; it is able to drive a high speed electroabsorption modulator.

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