Abstract
This chapter emphasizes on very high frequency (VHF) operation of capacitive plasmas. High density plasmas can be generated in capacitive systems at frequencies above the industry standard of 13.56 MHz. Other plasma parameters that are strongly affected by frequency in the VHFdomain include sheath thickness, ion energy at the electrodes, ion flux, plasma uniformity, and dissociation rates. All of these parameters vary with frequency in a way that favors higher frequencies for materials processing. A summary of scaling laws, indicating the qualitative behavior of VHF electropositive plasma properties is given. In terms of processing goals, VHF operation of diode reactors offers higher processing rates, higher quality films and devices, finer etched features, and greater uniformity in etching and deposition. The advantages and disadvantages of typical diode geometry is mentioned. Available processing results at VHF indicate that process rates typically reach a peak or a plateau at a specific frequency. In addition, reactors are generally dedicated to one task because of memory effects. Therefore, single frequency VHF operation may offer a simple, inexpensive improvement for most processes.
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