Abstract
This chapter discusses the metallo-organic chemical vapor deposition (MOCVD), which is a specialized area of CVD process. The deposition of indium phosphide and indium antimonide show that the deposition of critical semiconductor materials can be obtained at lower temperatures than conventional thermal CVD and that epitaxial growth can be easily achieved. Metallo-organics are the compounds in which the atom of an element is bound to one or more carbon atoms of an organic hydrocarbon group. Some of the elements used in MOCVD are nontransitional and are the metals of groups IIa, IIb, IIIb, IVb, Vb, and VIb. Thus the metallo-organics complement the halides and carbonyls, which are the precursors for the deposition of transition metals (Groups IVa, Va, and VIa) and their compounds. The MOCVD is used on a large scale, particularly in the semiconductor and opto-electronic applications, since the diversity and purity of the precursor chemicals have improved over the past several years.
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