4.2-mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

Abstract

We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1261.5 nm by means of decreasing the incorporation of aluminum into the GaInNAs well layers. The continuous wave (CW) output power at room temperature reached 4.2 mW, with a slope efficiency of 0.52 W/A. Secondary ion mass spectrometry (SIMS) analysis revealed that the aluminum incorporated into the GaInNAs layer did not originate from diffusion from the adjacent layers of GaInNAs, but from residual aluminum in the reactor.