Abstract

We have optimized the doping levels in distributed Bragg reflectors (DBRs) and GaInNAs/GaAs quantum well (QW) structures in order to enhance their optical output power. We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1260nm. The continuous wave (CW) output power of the devices reached 3.0mW at room temperature, with a slope efficiency of 0.28W/A. The devices consisted of conventional n-type and ptype doped DBRs with GaInNAs/GaAs 3QWs, and they were grown by metalorganic chemical vapor deposition (MOCVD).

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.