Abstract
In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-mum wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dBmiddotOmega. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC
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