Abstract

Summary form only given. The first realization of the integration of HEMTs (high electron mobility transistors) and HBTs (heterojunction bipolar transistors) on an InP substrate is reported. Furthermore, the application of this technology to a receiver OEIC (optoelectronic integrated circuit) is demonstrated by integrating these devices monolithically with a p-i-n photodiode to form an OEIC comprising these three diverse components. This complex integration was made possible using the selective regrowth capabilities of OMCVD (organometallic chemical vapor deposition). The schematic cross section of a receiver OEIC thus obtained is shown. >

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