Abstract
We report an essential progress towards the development of efficient GaInNAs-based semiconductor disk lasers operating at 1220 nm spectral range. The gain mirrors were fabricated by molecular beam epitaxy using a radio frequency plasma source for incorporating the nitrogen. The typical structure consisted of a 30-pair GaAs/AlAs distributed Bragg reflector and 10 GaInNAs quantum wells with relatively low content of nitrogen. The growth parameters and the composition of the structures have been optimized to reduce the detrimental effect of nitrogen on the emission efficiency. We have achieved a maximum output power of 3.5 W and a differential efficiency of 20%.
Published Version
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