Abstract
We report a passively mode-locked optically pumped semiconductor disk laser with emission at 1220 nm. Both the gain and the semiconductor saturable absorber mirrors used to build the laser are based on InGaAsN/GaAs quantum wells fabricated by molecular beam epitaxy. The growth parameters have been optimized to reduce the detrimental effects of nitrogen on the emission efficiency. Using a gain mirror comprising ten GaInNAs quantum wells with a relatively low nitrogen content and a saturable absorber mirror incorporating two GaInNAs quantum wells, we demonstrate generation of pulses with durations of ~5ps and average powers up to 275mW. We describe the fabrication procedure of the semiconductor structures and the results of laser characterization.
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