Abstract
One-dimensional semiconductor nanowires have attracted an increasing interest as potential building blocks for a wide range of optoelectronic and photonic applications including light harvesting, photodetection, and light emitting. However, realizing these applications requires a reliable and precise control of the materials’ electrical and optical properties which can be largely affected by defects and impurities. This chapter discusses intrinsic defect formation and incorporation of impurities in ZnO nanowires compared to ZnO bulk, nonradiative recombining surfacial and interfacial defects in GaNP nanowires, and strategies on how to suppress them as well as formation of defects in GaNAs nanowires.
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