Abstract
A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy\HfOx-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.
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