Abstract
The authors report electronic transport characterization and 2D insulator–metal transition in aerosol-jet-printed, electrolyte-gated In2O3 thin film transistors (TFTs) at electron densities of 1014 cm−2 and mobility of 10 cm2 V−1 s−1, demonstrating the potential for fundamental transport physics as well as maximizing ON current in solution-processed TFTs.
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