Abstract
Adhesive bending strength between microsized photoresist and Si substrate is evaluated to clarify effects of supercritical (Sc)CO_2 Cleaning. Multiple micro-sized cylindrical specimens with a diameter of 125μm were fabricated from a epoxy type photoresist, SU-8 on a silicon chip by photolithography. Adhesive testing was performed under bend loading using a part of microsized cylinders on a Si substrate without Sc CO_2 cleaning at first. After the testing, the chip was cleaned by Sc CO_2, and then, the remaining specimens on the chip were tested. Adhesive bend stress of the specimens with Sc CO_2 cleaning is 18% higher than that without the cleaning. The delamination surfaces of the Sc CO_2 cleaning specimens were significantly different between the SU-8 specimens with and without the Sc CO_2 cleaning. All the results suggest that the Sc CO_2 cleaning strongly affects the adhesive properties between the micro-size photoresist and Si substrate.
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