23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Abstract

An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing förster nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength emitting nanocrystals (NCs) as color conversion mediums. InGaN/GaN MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation between MQWs and NCs. A significant reduction in the decay lifetime of excitons in the MQWs of the hybrid structure has been observed as a result of the NRET from the nitride emitter to NCs. The NRET efficiency of the hybrid structures is obtained from the decay curves, as high as 80%. Based on a systemic optimization for white emission indexes, a series of hybrid ternary complementary color h‐LEDs have been demonstrated with a high color rendering index, up to 82, covering the white light emission at different correlated color temperatures ranging from 2629 to 6636 K, corresponding to warm white, natural white, and cold white. The efficiency droop of hybrid LEDs was validly suppressed, which mainly resulted from the extraction of excess carrier concentrations in InGaN/GaN MQWs via the rapid non‐radiative resonant energy transfer process under the higher injection condition, revealing a great potential to realize efficient white light emitters in the future.