Abstract
An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength emitting nanocrystals (NCs) as color‐conversion mediums. InGaN/GaN MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation between MQWs and NCs. A significant reduction in the decay lifetime of excitons in the MQWs of the hybrid structure has been observed as a result of the NRET from the nitride emitter to NCs. The NRET efficiency of the hybrid structures is obtained from the decay curves, as high as 80%. Moreover, a modified Förster formulation has exhibited that the exciton coupling distance in the hybrid structures is less than the Förster's radius, demonstrating a strong coupling between MQWs and NCs. Finally, based on a systemic optimization for white emission indexes, a series of hybrid ternary complementary color h‐LEDs have been demonstrated with a high color rendering index, up to 82, covering the white light emission at different correlated color temperatures ranging from 2629 to 6636 K, corresponding to warm white, natural white, and cold white.
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