Abstract
In order to solve the main issues of etch‐stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a‐IGZO pixel structure of AMLED, new 5‐mask ES a‐IGZO pixel structure was investigated. TFT channel length of 5 µm could be achieved by self‐aligned damage preventing layer. We could achieve good characteristics and reliability of short‐channel‐length (under 5 µm) ES TFTs. And also Cgs could be reduced more than 30%.
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