2-D Si0.8Ge0.2 source double-gate pocket PTFET for low power application: Modeling and simulation

Abstract

To process 1-bit of information the small supply voltage (Vdd) and minimal leakage current are needed for transistors. Subthreshold swing (SS) of 60 mV/dec at 300 K is the basic bottleneck in metal oxide semiconductor field effect transistors. DFT in QuantumATK R-2020.09 was used to study Si0.8Ge0.2 band structure and band gap. A p-type tunnel field effect transistor (PTFET) was modeled employing the dual gate concept. Top gate has two metals; source and counter doped pocket are Si0.8Ge0.2. According to the proposed device simulation, the proposed device is showing excellent thermal stability for large on-current (Ion), weak off-current (Ioff), and weak ambipolar current (Iambi) at different temperatures. The proposed device achieves the Ion of 72.44 µA/µm and 3.2 µA/µm at supply voltage of −1 V and −0.5 V, respectively. At −0.5 V of Vdd, current ratio of Ion/Ioff is more than 1012, so device can be used for low power applications.