Abstract
This paper is the first known composition to demonstrate the application of quintic splines in the development of a dual-gate MOSFET model based on the well-known drift-diffusion system of differential equations used in semiconductor analysis. The techniques and methodologies presented advance the current state of the art in this particular area by implementing improved 2-D numerical techniques and avoiding the use of common accuracy reducing assumptions to decrease semiconductor equation complexity and execution time. This results in a model that is valid in all regions of operation, includes Non-Quasi static transient behavior, accounts for short channel effects, and allows researchers to predict the real world manufacturing effects of gate oxide thickness imperfections and applied gate voltage disparities. Model validation was accomplished by comparing simulation results to previously published experimental data for long and short channel devices as well as data generated using an established commercial product. In addition, a subsequent paper submission is planned to demonstrate the application of this modeling method in determining frequency response for simple CMOS circuits.
Published Version
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