2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Abstract

A two-dimensional analytical model for the surface potential and threshold voltage of a dual work function Schottky barrier (SB) MOSFET is presented. The developed model considers the effects of the varying gate metal work function, gate and drain voltages, and different doping concentrations, gate dielectric permittivity, and silicon thickness. For solving the electrostatic potential of the SB-MOSFET by using Poisson’s equation with appropriate boundary conditions, parabolic approximation has been considered. The proposed device has also incorporated the effect of barrier height lowering at the metal/semiconductor contacts. The results of our modeled surface potential and the threshold voltage, match with technology computer aided design simulations.