Abstract
The sulphur to cadmium ratio in cadmium sulphide thin films has been compared to that of a clean single crystal using Auger spectroscopy. Thermally evaporated CdS films were found to be deficient in sulphur in their outer layers, but were stoichiometric after etching. Electron beam evaporated CdS films were found to be stoichiometric. It was found that baking these films at 190°C in argon or nitrogen at atmospheric pressure increased the sulphur to cadmium ratio, probably due to sulphur diffusing to the surface and being physisorbed there. From measurements of the temperature dependence of the copper sulphide layer in CdSCu 2S cells it was found that chalcocite, djurleite and diginite copper sulphide phases are present even in efficient cells. A model is proposed for the structure of the copper sulphide layer in which the copper deficient phases are the result of excess sulphur on the CdS surfaces and vary in thickness according to the degree of non-stoichiometry of the CdS surfaces.
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