15 - Integrated complementary metal oxide semiconductor-based sensors for gas and odour detection

Abstract

This chapter addresses both the challenges and benefits of fabricating gas sensors using complementary metal oxide semiconductor (CMOS) technology and the integration of associated circuitry onto a single silicon chip. The main objective described here is, specifically, the development of ultra-low power (~mW) resistive and calorimetric gas sensors that can operate at high temperatures (up to 600°C) on a CMOS platform. This compatibility with the standard CMOS manufacturing process will permit high volumes of production (>100k per annum) at low unit cost (<$1). The chapter describes in turn the design of interface electronics for these high-temperature gas sensors, the necessity of having arrays when employing non-selective gas-sensing materials, and the exploitation of a new generation of nano-materials as the gas sensing layer on CMOS devices. Finally, the outlook of smart CMOS-based gas (or odour) sensors is considered, with particular emphasis on the possibility of new domains of application.