Abstract
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AIGaAs/GaAs HEMT process. The bandwidth of 14.3 GHz implies suitability for transmission rates of up to 20 Gbit/s. The transimpedance is 670 Ω (into 50 Ω) and the projected sensitivity is −16.4 dBm (BER = 10−9).
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