Abstract
In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect and its frequency dispersion, occurring in floating body PD SOI MOSFETs. The model is validated through large-signal measurements, and the nonlinear properties of PD SOI transistors are studied.
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