106‐GHz bandwidth InP DHBT linear driver with a 3‐V ppdiff swing at 80 GBd in PAM‐4

Abstract

This Letter reports the design, fabrication and characterisation of a new differential linear driver, fabricated in the III-V Lab 0.7- emitter width indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-signal electrical characterisation shows 80-GBd symbol-rate four-level pulse amplitude (PAM-4) modulation conjugated with a driver output swing of 3-Vppdiff and a 0.74-W power consumption. Thus resulting in a 1.22-GBd driving efficiency, the highest in over 70-GBd drivers' state-of-the-art, at that date. Accordingly, S-parameter measurements of the standalone linear driver exhibit the highest gain-bandwidth product of 556 GHz, in that current state-of-the-art.