Abstract
This letter presents an algorithm for measuring the relative permittivity of thick dielectric substrates with scanning probe microscopy. Our technique does not rely on a specific type of microscopy setup and does not require expensive numerical field simulations. To demonstrate the versatility of our method, we perform measurements at high frequencies (18 GHz) with a scanning microwave microscope and at low frequencies (2 kHz) with electrostatic force microscopy. In our experiments, we study dielectric materials with epsilon values ranging from 4 (SiO2) to 300 (SrTiO3). For low epsilon values, the accuracy of the algorithm is better than 2% for tips with less than 80 nm tip radius.
Published Version
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