Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy

Abstract

In this chapter, we discuss recent developments in the characterization of polarization doped wide bandgap semiconductor (WBS) heterojunctions with an emphasis on characterization by scanning probe microscopy (SPM). Wide bandgap semiconductors, such as SiC and GaN, have a wide variety of applications in electronic and optoelectronic devices [1–6]. The operation of devices made from these materials is dominated by the polarization properties of III-N and SiC semiconductor crystals. For example, polarization doped 2 dimensional electron gas (2DEG) channels in undoped GaN/AlGaN and SiC polytypic heterojunctions have been fabricated with current densites in excess of 1A/mm. Other effects, such as surface charge instability stemming from polarization, offer interesting potentials and challenges.While some of these effects may be studied using more conventional techniques such as currentvoltage (IV) and capacitance-voltage (CV) techniques (described in sections 2 and 3), others require probes capable of investigation on the nanometer scale. Transmission electron microscopy (TEM) can be used to investigate such polarizationinduced phenomena with atomic resolution, but involves destructive and laborious sample preparation. SPM techniques offer powerful, non-destructive tools to effectively and conveniently probe electronic materials and devices. Since the discovery of scanning tunneling microscopy (STM) in 1981 by Binnig and Rohrer [7], the field of SPM has advanced to encompass a large number of variations including, (i) STM, (ii) Atomic force microscopy (AFM), (iii) Electrostatic force microscopy (EFM), (iv) Scanning capacitance microscopy (SCM), (v) Scanning conduction microscopy (SCM), (vi) Magnetic force microscopy (MFM), (vii) Piezoelectric force microscopy (PFM), and (vii) Near field scanning optical microscopy (NSOM). Of the above modes, the first five modes have been extensively used for semiconductor characterization [8–15]. For WBS characterization, especially III-N, AFM, EFM and SCM modes are the most important due to the strong polarization of III-N and SiC. In the latter half of this chapter, we focus on the characterization of III-N by EFM operated in