Abstract
It is found that equivalent gate noise power for l/f noise in n-channel silicon-gate MOS transistors at near zero drain voltage at room temperature is empirically described by two noise terms, which vary as K_{1}(q/C_{ox}) (V_{G} -V_{T})/f and K_{2}(q/C_{ox})^{2}/f, where V_{G} is gate voltage, V T is threshold Voltage, and C ox is gate-oxide capacitance per unit area. Unification of carrier-density fluctuation (McWhorter's model)and mobility fluctuation (Hooge's model) can account for the experimental data. The comparison between the theory and experiment shows that the carrier fluctuation term K 2 is proportional to oxide-trap density at Fermi-level. The mobility fluctuation term K 1 is correlated to K 2 , being proportional to \radic K_{2} . The origin of this correlation is yet to be clarified.
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