Abstract
At present there are two theories of 1/f noise in metal-oxide-semiconductor (MOS) transistors. One is based on the McWhorter model (number fluctuations), the other on the Hooge model (mobility fluctuations). In both theories the influence of high electric-field strengths on the mobility of carriers in the channel were left out of consideration. Here a new model of 1/f noise in MOS transistors is presented which is based on the Hooge model and takes into account the high electric-field strengths in the channnel. The theoretical results agree well with experimental results.
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