Abstract
Abstract It is well known that the properties of SiO 2 films, formed by reactive sputtering in oxygen, sensitively depend upon the details of chemical pretreatment of the Si surface and on the conditions of oxide formation. The influence of bulk defects in the silicon wafer has, however, not been adequately studied. Bombardment of the silicon surface with electrons and ions during the initial stages of the oxide formation is accompanied by extensive interaction with the surface defects, leading to changes in the charge of these defects and properties of the deposited film in general. If vacancies are the dominant defects, then a positive charge is created in the oxide film. If both vacancies and stacking faults are present, then both positive and negative charge can appear in the SiO 2 film.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call