Influence of defects in the silicon wafer on the properties of silicon oxide films formed by reactive sputtering : D. Kropman, M. Vinnal and P. Putk. Vacuum27 (3) 125 (1977)

doi:10.1016/0026-2714(77)90472-3

Influence of defects in the silicon wafer on the properties of silicon oxide films formed by reactive sputtering : D. Kropman, M. Vinnal and P. Putk. Vacuum27 (3) 125 (1977)

https://doi.org/10.1016/0026-2714(77)90472-3

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Journal: Microelectronics Reliability

Publication Date: Jan 1, 1977

#Properties Of Silicon Oxide Films #Reactive Sputtering #Properties Of Oxide Films #Silicon Wafer #Defects In Wafer #Properties Of Films #Silicon Oxide Films #Oxide Films #Silicon Oxide

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Influence of defects in the silicon wafer on the properties of silicon oxide films formed by reactive sputtering : D. Kropman, M. Vinnal and P. Putk. Vacuum27 (3) 125 (1977)

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Influence of defects in the silicon wafer on the properties of silicon oxide films formed by reactive sputtering : D. Kropman, M. Vinnal and P. Putk. Vacuum27 (3) 125 (1977)