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Abstract
Room-temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at 1.54-µm wavelength and exhibits no degradation after over 1,000 hours of operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high-quality MQW were obtained. The stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer and results in low-intensity noise. Annealing phenomena under cw operation are also discussed.
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