Abstract
We report the fabrication of multi-wavelength DFB laser arrays operating around 1.3μm using a novel MOCVD based selective area growth approach. We show that the DFB laser wavelength can be precisely tuned by adjusting key design parameters including the oxide mask strip width and separation. Stable-single-mode DFB laser array operations are demonstrated with side mode suppression ratio >35dB and the wavelength span of DFB laser array can arrive at 13.9nm through optimizing the design parameters. Our process represents a simple and cost effective solution for applications requiring multi-wavelength laser sources covering a wide wavelength span, such as silicon photonic light sources in next generation 100G Gigabit Ethernet optical systems.
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